Mje13009 Npn Fast Switching Power Transistor, Crystal Triode, High Voltage - 10pcs

MJE13009 is a semiconductor device made of silicon material that falls under the category of NPN transistors. This device is mainly used for switching and amplification purposes. The power dissipation of this device is 100W and the emitter-base voltage is 9V which is the amount of voltage needed to bias the device

Key Specifications/ Special Features:

• High breakdown voltage
• High current capability
• High switching speed

APPLICATIONS
·Particularly suited for 115V and 220V switch mode applications such as switching regulators ,inverters ,motor controls, solenoid/relay drivers and deflection circuits

CHARACTERISTICS

• Type: NPN
• Collector-Emitter Voltage: 400 V
• Collector-Base Voltage: 700 V
• Emitter-Base Voltage: 9 V
• Collector Current: 12 A
• Collector Dissipation: 100 W
• DC Current Gain (h): 8 to 40
• Transition Frequency: 4 MHz
• Package: TO-220